Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing

This research project studies the formation of Co silicides by KrF excimer pulsed laser annealing for possible applications to Si technologies. Capping layer such as Ti and TiN, which acts as a protective layer, was used to study the optical coupling effect of laser-annealed Co silicide.

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Bibliographic Details
Main Author:	Chow, Fong Ling
Other Authors:	Lee Pooi See
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:	https://hdl.handle.net/10356/4161
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-4161
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spelling	sg-ntu-dr.10356-41612023-07-04T16:59:04Z Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing Chow, Fong Ling Lee Pooi See Pey Kin Leong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics This research project studies the formation of Co silicides by KrF excimer pulsed laser annealing for possible applications to Si technologies. Capping layer such as Ti and TiN, which acts as a protective layer, was used to study the optical coupling effect of laser-annealed Co silicide. MASTER OF ENGINEERING (EEE) 2008-09-17T09:45:49Z 2008-09-17T09:45:49Z 2005 2005 Thesis Chow, F. L. (2005). Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing. Master’s thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/4161 10.32657/10356/4161 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Chow, Fong Ling Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing
description	This research project studies the formation of Co silicides by KrF excimer pulsed laser annealing for possible applications to Si technologies. Capping layer such as Ti and TiN, which acts as a protective layer, was used to study the optical coupling effect of laser-annealed Co silicide.
author2	Lee Pooi See
author_facet	Lee Pooi See Chow, Fong Ling
format	Theses and Dissertations
author	Chow, Fong Ling
author_sort	Chow, Fong Ling
title	Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing
title_short	Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing
title_full	Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing
title_fullStr	Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing
title_full_unstemmed	Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing
title_sort	formation of silicide films in advanced silicon devices using excimer pulsed laser annealing
publishDate	2008
url	https://hdl.handle.net/10356/4161
_version_	1772825498948206592

Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing

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