Development and characterization of gallium arsenide-based antimony-containing dilute nitride grown by molecular beam epitaxy
The fast growing demand for internet bandwidth has spurred the need for low cost optoelectronic devices working at the optical communication window of 1.3-1.55um. The wavelength range is important due to the minimum laser attenuation windows in a silica optical fiber. However, the high cost of the i...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2010
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| Online Access: | https://hdl.handle.net/10356/41841 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | The fast growing demand for internet bandwidth has spurred the need for low cost optoelectronic devices working at the optical communication window of 1.3-1.55um. The wavelength range is important due to the minimum laser attenuation windows in a silica optical fiber. However, the high cost of the incumbent InP-based optoelectronic devices has made optical network unfeasible compared to wireless/radio frequency networks, particularly for the "last mile" or fiber-to-premises applications. The emergence of dilute nitride compound semiconductors allows the growth of materials suitable for the 1.3um and 1.55um application on a cheaper and more robust GaAs substrate. In particular, the antimony-containing dilute nitride material system,
GaAsSbN, has not been widely studied compared to GaNAs, GalnNAs, and GaInNAsSb. In this thesis, the growth of GaAsSbN lattice-matched to GaAs was conducted using a solid-source molecular beam epitaxy (SS-MBE) system in conjunction with a radio frequency (r.f.) plasma N source and Sb valved-cracker source. Studies on GaAsSb/GaNAs/GaAsSbN/GaAs structure revealed two important properties of GaAsSbN growth. |
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