Development and characterization of gallium arsenide-based antimony-containing dilute nitride grown by molecular beam epitaxy

• Main Author: Satrio Wicaksono
• Other Authors: Yoon Soon Fatt
• Format: Theses and Dissertations
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/41841
• Institution: Nanyang Technological University

The fast growing demand for internet bandwidth has spurred the need for low cost optoelectronic devices working at the optical communication window of 1.3-1.55um. The wavelength range is important due to the minimum laser attenuation windows in a silica optical fiber. However, the high cost of the incumbent InP-based optoelectronic devices has made optical network unfeasible compared to wireless/radio frequency networks, particularly for the "last mile" or fiber-to-premises applications. The emergence of dilute nitride compound semiconductors allows the growth of materials suitable for the 1.3um and 1.55um application on a cheaper and more robust GaAs substrate. In particular, the antimony-containing dilute nitride material system, GaAsSbN, has not been widely studied compared to GaNAs, GalnNAs, and GaInNAsSb. In this thesis, the growth of GaAsSbN lattice-matched to GaAs was conducted using a solid-source molecular beam epitaxy (SS-MBE) system in conjunction with a radio frequency (r.f.) plasma N source and Sb valved-cracker source. Studies on GaAsSb/GaNAs/GaAsSbN/GaAs structure revealed two important properties of GaAsSbN growth.