All-solution processable top-gate organic field effect transistor
An organic field-effect transistor (OFET) is a field effect transistor using organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution-casting of polymers or small molecules, or by mechanical transfer of a peeled single-crystalline organ...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2011
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| Online Access: | http://hdl.handle.net/10356/42870 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | An organic field-effect transistor (OFET) is a field effect transistor using organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution-casting of polymers or small molecules, or by mechanical transfer of a peeled single-crystalline organic layer onto a substrate. These devices can be developed to realize low-cost, large-area electronic products. OFETs have been fabricated with various device geometries. The most commonly used device geometry is bottom gate with top drain- and source electrodes, because this geometry is similar to the thin-film silicon transistor (TFT) using thermally grown Si/SiO2 oxide as gate dielectric. Organic polymers, such as poly (methyl-methacrylate) (PMMA), can be used as dielectric, too. |
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