All-solution processable top-gate organic field effect transistor

• Main Author: Gao, Ying.
• Other Authors: Tang Xiaohong
• Format: Final Year Project
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/42870
• Institution: Nanyang Technological University

An organic field-effect transistor (OFET) is a field effect transistor using organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution-casting of polymers or small molecules, or by mechanical transfer of a peeled single-crystalline organic layer onto a substrate. These devices can be developed to realize low-cost, large-area electronic products. OFETs have been fabricated with various device geometries. The most commonly used device geometry is bottom gate with top drain- and source electrodes, because this geometry is similar to the thin-film silicon transistor (TFT) using thermally grown Si/SiO2 oxide as gate dielectric. Organic polymers, such as poly (methyl-methacrylate) (PMMA), can be used as dielectric, too.