Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects

• المؤلف الرئيسي: Fu, Chunmiao
• مؤلفون آخرون: Wu Shao Hui
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/43533
• المؤسسة: Nanyang Technological University

Electromigration (EM) occurs in the form of void formation because of mass transport, reducing the electrical reliability of interconnects. The aggressive shrinkage of interconnects while maintaining at high current capability and reliability emerges EM to be a serious reliability issue, especially...