Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects

• Main Author: Fu, Chunmiao
• Other Authors: Wu Shao Hui
• Format: Theses and Dissertations
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
• Online Access: https://hdl.handle.net/10356/43533
• Institution: Nanyang Technological University

Electromigration (EM) occurs in the form of void formation because of mass transport, reducing the electrical reliability of interconnects. The aggressive shrinkage of interconnects while maintaining at high current capability and reliability emerges EM to be a serious reliability issue, especially...