Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects
Electromigration (EM) occurs in the form of void formation because of mass transport, reducing the electrical reliability of interconnects. The aggressive shrinkage of interconnects while maintaining at high current capability and reliability emerges EM to be a serious reliability issue, especially...
Saved in:
主要作者: | |
---|---|
其他作者: | |
格式: | Theses and Dissertations |
語言: | English |
出版: |
2011
|
主題: | |
在線閱讀: | https://hdl.handle.net/10356/43533 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
機構: | Nanyang Technological University |
語言: | English |