Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects

Electromigration (EM) occurs in the form of void formation because of mass transport, reducing the electrical reliability of interconnects. The aggressive shrinkage of interconnects while maintaining at high current capability and reliability emerges EM to be a serious reliability issue, especially...

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主要作者: Fu, Chunmiao
其他作者: Wu Shao Hui
格式: Theses and Dissertations
語言:English
出版: 2011
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在線閱讀:https://hdl.handle.net/10356/43533
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機構: Nanyang Technological University
語言: English