Sub-threshold SRAM cell design for ultra low-power applications

Sub-threshold SRAM cell design for ultra low-power applications

With the continuous development of the technology nowadays, the application of domains of memory components such as Static Random Access Memory (SRAM) have become increasingly broader, so are the demands for the SRAM. In many situations, the power consumption has been the design aspect that is of ut...

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書目詳細資料
主要作者:	Lei, Gang.
其他作者:	Kong Zhi Hui
格式:	Final Year Project
語言:	English
出版:	2011
主題:	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
在線閱讀:	http://hdl.handle.net/10356/45006
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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