Process integration issues in the development of 0.18um 1.8v LP SRAM using local interconnect

This dissertation presents the development issues encountered during the present development of 0.18um LP (low-power) SRAM in Chartered Semiconductor Manufacturing Lid. All integration issues are explained with data and cross-sectional scanning electron micrographs for better explanation

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Bibliographic Details
Main Author:	Lal, Manni
Other Authors:	Lau, Wai Shing
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:	http://hdl.handle.net/10356/4553
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-4553
record_format	dspace
spelling	sg-ntu-dr.10356-45532023-07-04T15:08:59Z Process integration issues in the development of 0.18um 1.8v LP SRAM using local interconnect Lal, Manni Lau, Wai Shing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics This dissertation presents the development issues encountered during the present development of 0.18um LP (low-power) SRAM in Chartered Semiconductor Manufacturing Lid. All integration issues are explained with data and cross-sectional scanning electron micrographs for better explanation Master of Science (Microelectronics) 2008-09-17T09:54:07Z 2008-09-17T09:54:07Z 2002 2002 Thesis http://hdl.handle.net/10356/4553 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Lal, Manni Process integration issues in the development of 0.18um 1.8v LP SRAM using local interconnect
description	This dissertation presents the development issues encountered during the present development of 0.18um LP (low-power) SRAM in Chartered Semiconductor Manufacturing Lid. All integration issues are explained with data and cross-sectional scanning electron micrographs for better explanation
author2	Lau, Wai Shing
author_facet	Lau, Wai Shing Lal, Manni
format	Theses and Dissertations
author	Lal, Manni
author_sort	Lal, Manni
title	Process integration issues in the development of 0.18um 1.8v LP SRAM using local interconnect
title_short	Process integration issues in the development of 0.18um 1.8v LP SRAM using local interconnect
title_full	Process integration issues in the development of 0.18um 1.8v LP SRAM using local interconnect
title_fullStr	Process integration issues in the development of 0.18um 1.8v LP SRAM using local interconnect
title_full_unstemmed	Process integration issues in the development of 0.18um 1.8v LP SRAM using local interconnect
title_sort	process integration issues in the development of 0.18um 1.8v lp sram using local interconnect
publishDate	2008
url	http://hdl.handle.net/10356/4553
_version_	1772827486401331200

Process integration issues in the development of 0.18um 1.8v LP SRAM using local interconnect

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