Studying the self-heating effect in silicon-on-insulator transistors

Self-heating effect is an important issue for SOI CMOS. This is because there is a buried oxide layer under the channel region. So, this layer will act as barrier to heat flow as the thermal conductivity of the SiO2 is larger than of Si.Hence, a channel temperature extraction technique by in-situ is...

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Main Author: Lee, Kah Wai.
Other Authors: Ang Diing Shenp
Format: Final Year Project
Language:English
Published: 2011
Subjects:
Online Access:http://hdl.handle.net/10356/45717
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-457172023-07-07T17:27:02Z Studying the self-heating effect in silicon-on-insulator transistors Lee, Kah Wai. Ang Diing Shenp School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Self-heating effect is an important issue for SOI CMOS. This is because there is a buried oxide layer under the channel region. So, this layer will act as barrier to heat flow as the thermal conductivity of the SiO2 is larger than of Si.Hence, a channel temperature extraction technique by in-situ is presented to characterize the self-heating effects. Bachelor of Engineering 2011-06-16T06:57:09Z 2011-06-16T06:57:09Z 2011 2011 Final Year Project (FYP) http://hdl.handle.net/10356/45717 en Nanyang Technological University 53 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Lee, Kah Wai.
Studying the self-heating effect in silicon-on-insulator transistors
description Self-heating effect is an important issue for SOI CMOS. This is because there is a buried oxide layer under the channel region. So, this layer will act as barrier to heat flow as the thermal conductivity of the SiO2 is larger than of Si.Hence, a channel temperature extraction technique by in-situ is presented to characterize the self-heating effects.
author2 Ang Diing Shenp
author_facet Ang Diing Shenp
Lee, Kah Wai.
format Final Year Project
author Lee, Kah Wai.
author_sort Lee, Kah Wai.
title Studying the self-heating effect in silicon-on-insulator transistors
title_short Studying the self-heating effect in silicon-on-insulator transistors
title_full Studying the self-heating effect in silicon-on-insulator transistors
title_fullStr Studying the self-heating effect in silicon-on-insulator transistors
title_full_unstemmed Studying the self-heating effect in silicon-on-insulator transistors
title_sort studying the self-heating effect in silicon-on-insulator transistors
publishDate 2011
url http://hdl.handle.net/10356/45717
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