Studying the self-heating effect in silicon-on-insulator transistors

• Main Author: Lee, Kah Wai.
• Other Authors: Ang Diing Shenp
• Format: Final Year Project
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/45717
• Institution: Nanyang Technological University

Self-heating effect is an important issue for SOI CMOS. This is because there is a buried oxide layer under the channel region. So, this layer will act as barrier to heat flow as the thermal conductivity of the SiO2 is larger than of Si.Hence, a channel temperature extraction technique by in-situ is...