Electrical characterization of GaN-based layer structures

• 主要作者: Firdous Banu
• 其他作者: K Radhakrishnan
• 格式: Final Year Project
• 語言: English
• 出版: 2011
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• 在線閱讀: http://hdl.handle.net/10356/45886

Wide band gap semiconductors are attractive for several microelectronic and photonic applications such as high power amplifiers, LEDs and laser diodes. Particularly, GaN-based semiconductors are promising as they exhibit attractive properties such as low intrinsic carrier concentration and high ther...