Characterization of ultrathin gate dielectric films

Characterization of ultrathin gate dielectric films

This study reports on the effect of Fowler-Nordheim injection stress on the gate oxide above the channel and edge (gate/drain overlap) regions. Several methods for electrical characterization of the gate dielectric are used to study the types of charge trapping at the Si-SiO2 interface, channel and...

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Main Author: Leong, Li Ying.
Other Authors: Chen, Tupei
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:http://hdl.handle.net/10356/4596
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-4596
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spelling sg-ntu-dr.10356-45962023-07-04T15:59:01Z Characterization of ultrathin gate dielectric films Leong, Li Ying. Chen, Tupei School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials This study reports on the effect of Fowler-Nordheim injection stress on the gate oxide above the channel and edge (gate/drain overlap) regions. Several methods for electrical characterization of the gate dielectric are used to study the types of charge trapping at the Si-SiO2 interface, channel and edge regions. Master of Science (Microelectronics) 2008-09-17T09:55:01Z 2008-09-17T09:55:01Z 2003 2003 Thesis http://hdl.handle.net/10356/4596 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Leong, Li Ying.
Characterization of ultrathin gate dielectric films
description This study reports on the effect of Fowler-Nordheim injection stress on the gate oxide above the channel and edge (gate/drain overlap) regions. Several methods for electrical characterization of the gate dielectric are used to study the types of charge trapping at the Si-SiO2 interface, channel and edge regions.
author2 Chen, Tupei
author_facet Chen, Tupei
Leong, Li Ying.
format Theses and Dissertations
author Leong, Li Ying.
author_sort Leong, Li Ying.
title Characterization of ultrathin gate dielectric films
title_short Characterization of ultrathin gate dielectric films
title_full Characterization of ultrathin gate dielectric films
title_fullStr Characterization of ultrathin gate dielectric films
title_full_unstemmed Characterization of ultrathin gate dielectric films
title_sort characterization of ultrathin gate dielectric films
publishDate 2008
url http://hdl.handle.net/10356/4596
_version_ 1772825518053261312

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