Design and analysis of class-E power amplifier

In this paper, based on the specification assigned, I have designed a low voltage Class-E Power Amplifier (PA) using the 0.18μm TSMC CMOS technology from BSIM3 model to achieve the following results: f = 5.8GHz, Pout = 13.003dBm, VDD = 1.8VDC, Bandwidth = 200MHz, Termination = 50Ω, Power Added E...

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Bibliographic Details
Main Author: Khoo, Fatt Seng.
Other Authors: Zhang Yue Ping
Format: Final Year Project
Language:English
Published: 2011
Subjects:
Online Access:http://hdl.handle.net/10356/46198
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Institution: Nanyang Technological University
Language: English
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