Thermal effects in 1.3-μm InAs/GaAs quantum-dot vertical-cavity surface-emitting lasers

The goal of this project is to analyze and characterize the influence of self-heating on the output performance in 1.3-μm GaAs/InAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) and to realize improvement and optimization in device fabrication. This research work includes both th...

Full description

Saved in:
Bibliographic Details
Main Author: Xu, Dawei
Other Authors: Yoon Soon Fatt
Format: Theses and Dissertations
Language:English
Published: 2011
Subjects:
Online Access:https://hdl.handle.net/10356/46437
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:The goal of this project is to analyze and characterize the influence of self-heating on the output performance in 1.3-μm GaAs/InAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) and to realize improvement and optimization in device fabrication. This research work includes both theoretical (modeling) and experimental (device processing) approaches. In theoretical study, a self-consistent model comprised of rate equations and the thermal conduction equation was established to analyze the influence of self-heating on the carrier occupation, the quantum efficiency and the output power of 1.3-μm QD VCSELs. The devices with both single- and multi-mode emission were fabricated and characterized. The influence of self-heating was characterized based on the combination of theoretical and experimental investigations. The dielectric-free approach and the surface-relief technique were adopted to improve output power and the fundamental-mode emission, respectively. These were both realized in the QD VCSEL for the first time.