Thermal effects in 1.3-μm InAs/GaAs quantum-dot vertical-cavity surface-emitting lasers
The goal of this project is to analyze and characterize the influence of self-heating on the output performance in 1.3-μm GaAs/InAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) and to realize improvement and optimization in device fabrication. This research work includes both th...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2011
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/46437 |
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| 總結: | The goal of this project is to analyze and characterize the influence of self-heating on the output performance in 1.3-μm GaAs/InAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) and to realize improvement and optimization in device fabrication. This research work includes both theoretical (modeling) and experimental (device processing) approaches.
In theoretical study, a self-consistent model comprised of rate equations and the thermal conduction equation was established to analyze the influence of self-heating on the carrier occupation, the quantum efficiency and the output power of 1.3-μm QD VCSELs. The devices with both single- and multi-mode emission were fabricated and characterized. The influence of self-heating was characterized based on the combination of theoretical and experimental investigations.
The dielectric-free approach and the surface-relief technique were adopted to improve output power and the fundamental-mode emission, respectively. These were both realized in the QD VCSEL for the first time. |
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