A study of dislocations in lattice-mismatched semiconductors
79 p.
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2011
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sg-ntu-dr.10356-468452023-07-04T16:45:04Z A study of dislocations in lattice-mismatched semiconductors Yu, Ying Yoon Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors 79 p. Recently heteroepitaxy of III-V semiconductors with Si microelectronics on a single substrate has attracted great interest due to the ability of integrating optoelectronics on a silicon-based substrate. However, the fundamental differences in material, namely the 4% lattice mismatch and > 64% thermal expansion coefficient mismatch between GaAs and Si, epitaxial GaAs/Si integration are significantly maneuvered by the threading dislocations and the anti-phase defects (APDs). MASTER OF ENGINEERING (EEE) 2011-12-23T10:00:31Z 2011-12-23T10:00:31Z 2011 2011 Thesis Yu, Y. (2011). A study of dislocations in lattice-mismatched semiconductors. Master’s thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/46845 10.32657/10356/46845 Nanyang Technological University application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Yu, Ying A study of dislocations in lattice-mismatched semiconductors |
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79 p. |
author2 |
Yoon Soon Fatt |
author_facet |
Yoon Soon Fatt Yu, Ying |
format |
Theses and Dissertations |
author |
Yu, Ying |
author_sort |
Yu, Ying |
title |
A study of dislocations in lattice-mismatched semiconductors |
title_short |
A study of dislocations in lattice-mismatched semiconductors |
title_full |
A study of dislocations in lattice-mismatched semiconductors |
title_fullStr |
A study of dislocations in lattice-mismatched semiconductors |
title_full_unstemmed |
A study of dislocations in lattice-mismatched semiconductors |
title_sort |
study of dislocations in lattice-mismatched semiconductors |
publishDate |
2011 |
url |
https://hdl.handle.net/10356/46845 |
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1772828734613618688 |