Study of SIC oxidation for device application
167 p.
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2011
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sg-ntu-dr.10356-468562023-07-04T16:09:03Z Study of SIC oxidation for device application Zhao, Pan Rusli School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials 167 p. Silicon carbide (SiC) is a wide bandgap semiconductor that exhibits many excellent electrical properties such as high critical field strength and thermal conductivity. As a result, it has attracted a lot of attention for high temperature, high power and high frequency device applications. In addition, SiC can be thermally oxidized to form silicon dioxide (Si02), which is a critical building block of silicon complimentary metal-oxidesemiconductor (MOS) technology. This means that Si CMOS processes can be possibly transferred directly to SiC based CMOS devices. This renders SiC very attractive and offers many great advantages compared to other wide bandgap semiconductors such as gallium nitride (GaN). The development of SiC device applications is further propelled by the fact that high quality 4-inch 4H-SiC substrates are commercially available. DOCTOR OF PHILOSOPHY (EEE) 2011-12-23T10:01:30Z 2011-12-23T10:01:30Z 2009 2009 Thesis Zhao, P. (2009). Study of SIC oxidation for device application. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/46856 10.32657/10356/46856 Nanyang Technological University application/pdf |
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Singapore Singapore |
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DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials |
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DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Zhao, Pan Study of SIC oxidation for device application |
| description |
167 p. |
| author2 |
Rusli |
| author_facet |
Rusli Zhao, Pan |
| format |
Theses and Dissertations |
| author |
Zhao, Pan |
| author_sort |
Zhao, Pan |
| title |
Study of SIC oxidation for device application |
| title_short |
Study of SIC oxidation for device application |
| title_full |
Study of SIC oxidation for device application |
| title_fullStr |
Study of SIC oxidation for device application |
| title_full_unstemmed |
Study of SIC oxidation for device application |
| title_sort |
study of sic oxidation for device application |
| publishDate |
2011 |
| url |
https://hdl.handle.net/10356/46856 |
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1772827408893739008 |