Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs

Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs

The purpose of this project is to study the dopant redistribution and its associated effect on the diode I-V characteristics of the source and drain during gate oxide breakdown in narrow metal-oxide-semiconductor field-effect transistor (MOSFET). During the evolution of gate dielectric progressive b...

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Main Author: Lim, Wai Tat.
Other Authors: Pey, Kin Leong
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:http://hdl.handle.net/10356/4695
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-46952023-07-04T16:25:44Z Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs Lim, Wai Tat. Pey, Kin Leong School of Electrical and Electronic Engineering Tung, Chih Hang DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits The purpose of this project is to study the dopant redistribution and its associated effect on the diode I-V characteristics of the source and drain during gate oxide breakdown in narrow metal-oxide-semiconductor field-effect transistor (MOSFET). During the evolution of gate dielectric progressive breakdown, the substantially high localized temperatures in the vicinity of the breakdown spot which can exceed silicon melting point will cause impurity dopants in the silicon to be redistributed. Master of Science (Microelectronics) 2008-09-17T09:56:49Z 2008-09-17T09:56:49Z 2005 2005 Thesis http://hdl.handle.net/10356/4695 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Lim, Wai Tat.
Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs
description The purpose of this project is to study the dopant redistribution and its associated effect on the diode I-V characteristics of the source and drain during gate oxide breakdown in narrow metal-oxide-semiconductor field-effect transistor (MOSFET). During the evolution of gate dielectric progressive breakdown, the substantially high localized temperatures in the vicinity of the breakdown spot which can exceed silicon melting point will cause impurity dopants in the silicon to be redistributed.
author2 Pey, Kin Leong
author_facet Pey, Kin Leong
Lim, Wai Tat.
format Theses and Dissertations
author Lim, Wai Tat.
author_sort Lim, Wai Tat.
title Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs
title_short Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs
title_full Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs
title_fullStr Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs
title_full_unstemmed Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs
title_sort study of dopant redistribution during gate oxide breakdown in narrow mosfets
publishDate 2008
url http://hdl.handle.net/10356/4695
_version_ 1772825229920305152

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