Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs

• المؤلف الرئيسي: Lim, Wai Tat.
• مؤلفون آخرون: Pey, Kin Leong
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/4695

The purpose of this project is to study the dopant redistribution and its associated effect on the diode I-V characteristics of the source and drain during gate oxide breakdown in narrow metal-oxide-semiconductor field-effect transistor (MOSFET). During the evolution of gate dielectric progressive b...