Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs
The purpose of this project is to study the dopant redistribution and its associated effect on the diode I-V characteristics of the source and drain during gate oxide breakdown in narrow metal-oxide-semiconductor field-effect transistor (MOSFET). During the evolution of gate dielectric progressive b...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/4695 |
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| Institution: | Nanyang Technological University |