Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs

• 主要作者: Lim, Wai Tat.
• 其他作者: Pey, Kin Leong
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• 在線閱讀: http://hdl.handle.net/10356/4695
• 機構: Nanyang Technological University

The purpose of this project is to study the dopant redistribution and its associated effect on the diode I-V characteristics of the source and drain during gate oxide breakdown in narrow metal-oxide-semiconductor field-effect transistor (MOSFET). During the evolution of gate dielectric progressive b...