Characterization of narrow bandgap semiconductors
This report is about characterization of the narrow bandgap semiconductor. The semiconductor used in the experiment is Indium antimonide (InSb). The behavior and properties of the InSb was focus in this report. The three samples InSb was grown by the Metal Organic Chemical Vapor Deposition with...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/47596 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | This report is about characterization of the narrow bandgap semiconductor. The semiconductor used in the experiment is Indium antimonide (InSb). The behavior and properties of the InSb was focus in this report. The three samples InSb was grown by the Metal Organic Chemical Vapor
Deposition with different temperatures.
All the grown samples were undergoing of various characterization techniques to obtain its
properties. There are various popular methods used to characterize the grown material such as
Scanning Electron Microscopy (SEM) Photograph, Photoluminescence Spectroscopy (PL), Xray
diffraction (XRD), and Hall Effect Measurement to allow us to understand more on the
grown samples properties. With all this techniques, the defects can be detected easily. This also
allows us to find the high quality samples grown among the three samples and determine the best
temperature to growth the high quality sample. |
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