Ultraviolet zinc oxide laser diodes on Si substrate

• Main Author: Yu, Siu Fung.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/47601
• Institution: Nanyang Technological University

The main objective of this project is to fabricate ultraviolet (UV) ZnO homojunction laser diodes on Si substrate by using our proposed laser FCVA technique. The objectives of this proposal are listed (in order of priority) below: •To modify the existing pulsed-laser deposition system to laser FCVA system for the fabrication of high-quality n- and p- type ZnO films. • To fabricate high carrier concentration (>1019 cm–3) and low resistivity (<10–3 Ωcm) p-type ZnO thin films by FCVA technique plus laser ablation using P-compound sources as the dopants, • To achieve high-efficiency n-ZnO:Al/p-ZnO:P/Si substrate light-emitting diodes (LEDs), and • To demonstrate UV lasing from the p-ZnO:P/i-ZnO-SiO2 nanocomposite/n-ZnO:Al junction diodes on Si substrate.