TEM characterization of III-V diode structure grown on GeOI structures

• Main Author: Myat Kyawt Ei.
• Other Authors: Ng Beng Koon
• Format: Final Year Project
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/47700
• Institution: Nanyang Technological University

A highly sensitive semiconductor device, avalanche photo diode, exploits photoelectric effect to convert light to electricity. APDs which can act like photo detectors provide a built-in first stage gain through avalanche multiplication. When the photo generated carriers acquire enough energy from th...