TEM characterization of III-V diode structure grown on GeOI structures

• المؤلف الرئيسي: Myat Kyawt Ei.
• مؤلفون آخرون: Ng Beng Koon
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/47700

A highly sensitive semiconductor device, avalanche photo diode, exploits photoelectric effect to convert light to electricity. APDs which can act like photo detectors provide a built-in first stage gain through avalanche multiplication. When the photo generated carriers acquire enough energy from th...