Variable angle spectroellipsometry of silicon based multilayers

In this project, LPCVD silicon nitride (SiNx), LPCVD polycrystalline silicon (poly-Si) films, wafer bonded (WB) silicon-on-insulator (SOI) substrate and separation-by-implantation-of-oxygen (SIMOX) silicon-on-insulator (SOI) substrates were non-destructively characterized by a horizontal variable an...

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Main Author:	Loh, Soon Yoong.
Other Authors:	Wong, T. S. K.
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	http://hdl.handle.net/10356/4797
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-47972023-07-04T15:39:17Z Variable angle spectroellipsometry of silicon based multilayers Loh, Soon Yoong. Wong, T. S. K. School of Electrical and Electronic Engineering Goh, Wang Ling DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Semiconductors In this project, LPCVD silicon nitride (SiNx), LPCVD polycrystalline silicon (poly-Si) films, wafer bonded (WB) silicon-on-insulator (SOI) substrate and separation-by-implantation-of-oxygen (SIMOX) silicon-on-insulator (SOI) substrates were non-destructively characterized by a horizontal variable angle spectroscopic ellipsometer (H-VASE) with spectral range of 250nm-1700nm at 70°, 75° and 80° angles of incidence. These measurements were carried out as part of an effort to develop readily usable optical models for monitoring wafers in a university CMOS process facility. Doctor of Philosophy (EEE) 2008-09-17T09:58:53Z 2008-09-17T09:58:53Z 2000 2000 Thesis http://hdl.handle.net/10356/4797 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Loh, Soon Yoong. Variable angle spectroellipsometry of silicon based multilayers
description	In this project, LPCVD silicon nitride (SiNx), LPCVD polycrystalline silicon (poly-Si) films, wafer bonded (WB) silicon-on-insulator (SOI) substrate and separation-by-implantation-of-oxygen (SIMOX) silicon-on-insulator (SOI) substrates were non-destructively characterized by a horizontal variable angle spectroscopic ellipsometer (H-VASE) with spectral range of 250nm-1700nm at 70°, 75° and 80° angles of incidence. These measurements were carried out as part of an effort to develop readily usable optical models for monitoring wafers in a university CMOS process facility.
author2	Wong, T. S. K.
author_facet	Wong, T. S. K. Loh, Soon Yoong.
format	Theses and Dissertations
author	Loh, Soon Yoong.
author_sort	Loh, Soon Yoong.
title	Variable angle spectroellipsometry of silicon based multilayers
title_short	Variable angle spectroellipsometry of silicon based multilayers
title_full	Variable angle spectroellipsometry of silicon based multilayers
title_fullStr	Variable angle spectroellipsometry of silicon based multilayers
title_full_unstemmed	Variable angle spectroellipsometry of silicon based multilayers
title_sort	variable angle spectroellipsometry of silicon based multilayers
publishDate	2008
url	http://hdl.handle.net/10356/4797
_version_	1772828420503240704

Variable angle spectroellipsometry of silicon based multilayers

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