Characterization of flicker noise in sub-micron NMOS device
Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This is because the signals are no longer significantly higher than the LFN, especially since the LFN level increases significantly as the device's s...
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sg-ntu-dr.10356-49192023-07-04T16:23:34Z Characterization of flicker noise in sub-micron NMOS device Myo Thant Win. Yeo, Kiat Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This is because the signals are no longer significantly higher than the LFN, especially since the LFN level increases significantly as the device's size is scaled down. The aforementioned reasons have motivated our investigation of 1/f noise in MOS transistor. In this project, the characterization of low frequency noise in n-channel metal-oxide semiconductor (NMOS) devices fabricated using minimum channel length of 0.13^m technologies are experimentally evaluated and compared. Master of Science (Consumer Electronics) 2008-09-17T10:01:27Z 2008-09-17T10:01:27Z 2004 2004 Thesis http://hdl.handle.net/10356/4919 Nanyang Technological University application/pdf |
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Asia |
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Singapore Singapore |
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DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits |
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DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Myo Thant Win. Characterization of flicker noise in sub-micron NMOS device |
| description |
Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This is because the signals are no longer significantly higher than the LFN, especially since the LFN level increases significantly as the device's size is scaled down. The aforementioned reasons have motivated our investigation of 1/f noise in MOS transistor. In this project, the characterization of low frequency noise in n-channel metal-oxide semiconductor (NMOS) devices fabricated using minimum channel length of 0.13^m technologies are experimentally evaluated and compared. |
| author2 |
Yeo, Kiat Seng |
| author_facet |
Yeo, Kiat Seng Myo Thant Win. |
| format |
Theses and Dissertations |
| author |
Myo Thant Win. |
| author_sort |
Myo Thant Win. |
| title |
Characterization of flicker noise in sub-micron NMOS device |
| title_short |
Characterization of flicker noise in sub-micron NMOS device |
| title_full |
Characterization of flicker noise in sub-micron NMOS device |
| title_fullStr |
Characterization of flicker noise in sub-micron NMOS device |
| title_full_unstemmed |
Characterization of flicker noise in sub-micron NMOS device |
| title_sort |
characterization of flicker noise in sub-micron nmos device |
| publishDate |
2008 |
| url |
http://hdl.handle.net/10356/4919 |
| _version_ |
1772828341543370752 |