Characterization of flicker noise in sub-micron NMOS device

• المؤلف الرئيسي: Myo Thant Win.
• مؤلفون آخرون: Yeo, Kiat Seng
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/4919
• المؤسسة: Nanyang Technological University

Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This is because the signals are no longer significantly higher than the LFN, especially since the LFN level increases significantly as the device's s...