Characterization of flicker noise in sub-micron NMOS device

Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This is because the signals are no longer significantly higher than the LFN, especially since the LFN level increases significantly as the device's s...

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主要作者: Myo Thant Win.
其他作者: Yeo, Kiat Seng
格式: Theses and Dissertations
出版: 2008
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在線閱讀:http://hdl.handle.net/10356/4919
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