Thin film characterizations for resistive memory

• Main Author: Weng, Bao Bin.
• Other Authors: Zhu Weiguang
• Format: Final Year Project
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors; DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/49815
• Institution: Nanyang Technological University

Resistive memory is currently one of the focused research topics in semiconductor and microelectronics research activities. Resistive memory has advantages of high density, 3-D architecture design, easy to fabrication, low-power use, non-volatile, and high expected performance. In this Final Year Project, very thin films with thickness in a range of 1 – 10 nm thick will be grown using the state-of-the-arts laser molecular beam epitaxy (laser-MBE) technology by research staff and graduate students, afterwhich characterize conduction/resistive behavior and other physical and electrical properties of such nano-thin films. The student will closely work with supervisor, research staff and graduate student.