Embedded logic compatible dynamic random access memory design

• المؤلف الرئيسي: Yi, He.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/49934

Logic-compatible 2T and 3T embedded DRAM (EDRAM) cells have recently gained their popularity in embedded applications because of their high density and good voltage margin. The most important design requirements in EDRAM cells are the cell area, data retention time and read speed. In the first part...