Embedded logic compatible dynamic random access memory design

• 主要作者: Yi, He.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Final Year Project
• 語言: English
• 出版: 2012
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: http://hdl.handle.net/10356/49934

Logic-compatible 2T and 3T embedded DRAM (EDRAM) cells have recently gained their popularity in embedded applications because of their high density and good voltage margin. The most important design requirements in EDRAM cells are the cell area, data retention time and read speed. In the first part...