Investigation of the avalanche multiplication characteristics in advanced avalanche photodiodes (APDs)
Advanced semiconductor technology has enabled APDs with narrow multiplication widths, but such application has been limited due to poor performance predicted by the McIntyre’s expression, which is based on the local assumption that ignores the dead space effects of the impact ionization process. Usi...
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格式: | Final Year Project |
語言: | English |
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2012
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在線閱讀: | http://hdl.handle.net/10356/49936 |
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機構: | Nanyang Technological University |
語言: | English |