Intersubband photoluminescence from III-nitride multiple quantum wells

• المؤلف الرئيسي: Carter, Dale
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/50145

This report confirms the achievement of near infrared absorption at 1.865μm wavelength using FTIR (Fourier Transform Infrared Spectroscopy) at room temperature conditions for a GaN/Al(Ga)N multiple quantum well structure. It covers the processes undertaken to prepare each sample, the set up of the F...