Atomistic simulation of structure and mobility of dislocation in semiconductor

Atomistic simulation of structure and mobility of dislocation in semiconductor

The core structure and mobility of 90° partial dislocations have been studied. The core structure were simulated and analysed for 0K and at elevated temperature.

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Bibliographic Details
Main Author: Choo, Zhi Min.
Other Authors: Liang, Meng Heng
Format: Theses and Dissertations
Language:English
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:http://hdl.handle.net/10356/5045
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Institution: Nanyang Technological University
Language: English
Description
Summary:The core structure and mobility of 90° partial dislocations have been studied. The core structure were simulated and analysed for 0K and at elevated temperature.

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