Atomistic simulation of structure and mobility of dislocation in semiconductor

• Main Author: Choo, Zhi Min.
• Other Authors: Liang, Meng Heng
• Format: Theses and Dissertations
• Language: English
• Published: 2008
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• Online Access: http://hdl.handle.net/10356/5045
• Institution: Nanyang Technological University

The core structure and mobility of 90° partial dislocations have been studied. The core structure were simulated and analysed for 0K and at elevated temperature.