The molecular beam epitaxy growth of InSbN compound and its characterization

The molecular beam epitaxy growth of InSbN compound and its characterization

In this thesis, indium antimonide nitride (InSb1-xNx) alloys were grown using a solid-source molecular beam epitaxy (MBE) system in conjunction with a radio frequency (RF) plasma N source. This work provides an enhanced understanding of this potentially significant alloy by investigating the structu...

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Main Author: Lim, Kim Peng
Other Authors: Yoon Soon Fatt
Format: Theses and Dissertations
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:https://hdl.handle.net/10356/50466
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-504662023-07-04T17:09:08Z The molecular beam epitaxy growth of InSbN compound and its characterization Lim, Kim Peng Yoon Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics In this thesis, indium antimonide nitride (InSb1-xNx) alloys were grown using a solid-source molecular beam epitaxy (MBE) system in conjunction with a radio frequency (RF) plasma N source. This work provides an enhanced understanding of this potentially significant alloy by investigating the structural, electrical and optical properties of the InSb1-xNx alloys using different core characterization techniques. DOCTOR OF PHILOSOPHY (EEE) 2012-06-06T01:23:59Z 2012-06-06T01:23:59Z 2012 2012 Thesis Lim, K. P. (2012). The molecular beam epitaxy growth of InSbN compound and its characterization. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/50466 10.32657/10356/50466 en 180 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Lim, Kim Peng
The molecular beam epitaxy growth of InSbN compound and its characterization
description In this thesis, indium antimonide nitride (InSb1-xNx) alloys were grown using a solid-source molecular beam epitaxy (MBE) system in conjunction with a radio frequency (RF) plasma N source. This work provides an enhanced understanding of this potentially significant alloy by investigating the structural, electrical and optical properties of the InSb1-xNx alloys using different core characterization techniques.
author2 Yoon Soon Fatt
author_facet Yoon Soon Fatt
Lim, Kim Peng
format Theses and Dissertations
author Lim, Kim Peng
author_sort Lim, Kim Peng
title The molecular beam epitaxy growth of InSbN compound and its characterization
title_short The molecular beam epitaxy growth of InSbN compound and its characterization
title_full The molecular beam epitaxy growth of InSbN compound and its characterization
title_fullStr The molecular beam epitaxy growth of InSbN compound and its characterization
title_full_unstemmed The molecular beam epitaxy growth of InSbN compound and its characterization
title_sort molecular beam epitaxy growth of insbn compound and its characterization
publishDate 2012
url https://hdl.handle.net/10356/50466
_version_ 1772826325254406144

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