Compact modeling of high-voltage (LDMOS/MISHEMT) devices
In this thesis, physics-based analytical compact models are developed for the laterally diffused metal-oxide-semiconductor (LDMOS) transistor and the metal-insulator-semiconductor high electron mobility transistor (MISHEMT), respectively, in order to aid the microwave circuit simulation. The LDMOS i...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2012
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/50791 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |