Compact modeling of high-voltage (LDMOS/MISHEMT) devices
In this thesis, physics-based analytical compact models are developed for the laterally diffused metal-oxide-semiconductor (LDMOS) transistor and the metal-insulator-semiconductor high electron mobility transistor (MISHEMT), respectively, in order to aid the microwave circuit simulation. The LDMOS i...
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Format: | Theses and Dissertations |
Language: | English |
Published: |
2012
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Online Access: | https://hdl.handle.net/10356/50791 |
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Institution: | Nanyang Technological University |
Language: | English |
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