Compact modeling of high-voltage (LDMOS/MISHEMT) devices

In this thesis, physics-based analytical compact models are developed for the laterally diffused metal-oxide-semiconductor (LDMOS) transistor and the metal-insulator-semiconductor high electron mobility transistor (MISHEMT), respectively, in order to aid the microwave circuit simulation. The LDMOS i...

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Bibliographic Details
Main Author: Zhang, Junbin
Other Authors: Zhou Xing
Format: Theses and Dissertations
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/50791
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Institution: Nanyang Technological University
Language: English
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