Design of band-gap reference for high temperature application
CMOS Band-gap reference circuits were designed in this project. Different approaches for the design are considered. In this project, the designs were simulated using 1.0 μm SOI-CMOS Technology from XFAB. XI10 from XFAB process is used. The sensitivity of thre...
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| 主要作者: | |
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| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
2012
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/50906 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | CMOS Band-gap reference circuits were designed in this project. Different approaches for the design are considered. In this project, the designs were simulated using 1.0 μm SOI-CMOS Technology from XFAB. XI10 from XFAB process is used. The sensitivity of threshold voltages and mobility of the MOSFET transistors had created challenging problems to achieve the good band-gap reference circuit.
A voltage reference circuits with a 5-V supply was successfully designed. The designed output voltage at 1.17 V achieved a temperature coefficient (TC) of 16.072 ppm/ᵒC. The reference voltage varies only 2 mV over 300ᵒC. The amplifier and bias generator were designed to meet the requirements of the band-gap reference circuits in order to perform well over a wide range of temperature.
Two types of operational amplifiers, folded cascade amplifier and two-stage amplier, were designed for the circuit. Their advantages and disadvantages are discussed in the report. Other different approaches for the better performance of the band-gap reference circuits such as cascade current mirror and using gain enhanced mirror were considered. |
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