Design of band-gap reference for high temperature application
CMOS Band-gap reference circuits were designed in this project. Different approaches for the design are considered. In this project, the designs were simulated using 1.0 μm SOI-CMOS Technology from XFAB. XI10 from XFAB process is used. The sensitivity of thre...
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sg-ntu-dr.10356-509062023-07-07T16:25:59Z Design of band-gap reference for high temperature application Su, Zun Mon. Goh Wang Ling School of Electrical and Electronic Engineering A*STAR Institute of Microelectronics DRNTU::Engineering CMOS Band-gap reference circuits were designed in this project. Different approaches for the design are considered. In this project, the designs were simulated using 1.0 μm SOI-CMOS Technology from XFAB. XI10 from XFAB process is used. The sensitivity of threshold voltages and mobility of the MOSFET transistors had created challenging problems to achieve the good band-gap reference circuit. A voltage reference circuits with a 5-V supply was successfully designed. The designed output voltage at 1.17 V achieved a temperature coefficient (TC) of 16.072 ppm/ᵒC. The reference voltage varies only 2 mV over 300ᵒC. The amplifier and bias generator were designed to meet the requirements of the band-gap reference circuits in order to perform well over a wide range of temperature. Two types of operational amplifiers, folded cascade amplifier and two-stage amplier, were designed for the circuit. Their advantages and disadvantages are discussed in the report. Other different approaches for the better performance of the band-gap reference circuits such as cascade current mirror and using gain enhanced mirror were considered. Bachelor of Engineering 2012-12-17T06:23:07Z 2012-12-17T06:23:07Z 2012 2012 Final Year Project (FYP) http://hdl.handle.net/10356/50906 en Nanyang Technological University 61 p. application/pdf |
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DRNTU::Engineering Su, Zun Mon. Design of band-gap reference for high temperature application |
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CMOS Band-gap reference circuits were designed in this project. Different approaches for the design are considered. In this project, the designs were simulated using 1.0 μm SOI-CMOS Technology from XFAB. XI10 from XFAB process is used. The sensitivity of threshold voltages and mobility of the MOSFET transistors had created challenging problems to achieve the good band-gap reference circuit.
A voltage reference circuits with a 5-V supply was successfully designed. The designed output voltage at 1.17 V achieved a temperature coefficient (TC) of 16.072 ppm/ᵒC. The reference voltage varies only 2 mV over 300ᵒC. The amplifier and bias generator were designed to meet the requirements of the band-gap reference circuits in order to perform well over a wide range of temperature.
Two types of operational amplifiers, folded cascade amplifier and two-stage amplier, were designed for the circuit. Their advantages and disadvantages are discussed in the report. Other different approaches for the better performance of the band-gap reference circuits such as cascade current mirror and using gain enhanced mirror were considered. |
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Goh Wang Ling |
author_facet |
Goh Wang Ling Su, Zun Mon. |
format |
Final Year Project |
author |
Su, Zun Mon. |
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Su, Zun Mon. |
title |
Design of band-gap reference for high temperature application |
title_short |
Design of band-gap reference for high temperature application |
title_full |
Design of band-gap reference for high temperature application |
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Design of band-gap reference for high temperature application |
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Design of band-gap reference for high temperature application |
title_sort |
design of band-gap reference for high temperature application |
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2012 |
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http://hdl.handle.net/10356/50906 |
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1772825967297822720 |