Non-volatile memory design platform with 3D hybrid integration of CMOS and nano devices

Non-volatile memory design platform with 3D hybrid integration of CMOS and nano devices

To study Non-volatile memory (NVM), we do research on several NVM devices. Study Topological Insulator and Race Track Memory, searching for a potentially better structure. Also study on spin transfer torque random access memory (stt-ram) and spin transfer torque magnetoresistive random access memory...

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Bibliographic Details
Main Author: Niu, Chao.
Other Authors: School of Electrical and Electronic Engineering
Format: Final Year Project
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Access:http://hdl.handle.net/10356/50912
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Institution: Nanyang Technological University
Language: English
Description
Summary:To study Non-volatile memory (NVM), we do research on several NVM devices. Study Topological Insulator and Race Track Memory, searching for a potentially better structure. Also study on spin transfer torque random access memory (stt-ram) and spin transfer torque magnetoresistive random access memory (stt-mram), comparing different structures of stt-mram with the help of simulation on NVMspice.

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