Non-volatile memory design platform with 3D hybrid integration of CMOS and nano devices

• 主要作者: Niu, Chao.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Final Year Project
• 語言: English
• 出版: 2012
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• 在線閱讀: http://hdl.handle.net/10356/50912

To study Non-volatile memory (NVM), we do research on several NVM devices. Study Topological Insulator and Race Track Memory, searching for a potentially better structure. Also study on spin transfer torque random access memory (stt-ram) and spin transfer torque magnetoresistive random access memory...