Non-volatile memory design platform with 3D hybrid integration of CMOS and nano devices

• المؤلف الرئيسي: Niu, Chao.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/50912
• المؤسسة: Nanyang Technological University

To study Non-volatile memory (NVM), we do research on several NVM devices. Study Topological Insulator and Race Track Memory, searching for a potentially better structure. Also study on spin transfer torque random access memory (stt-ram) and spin transfer torque magnetoresistive random access memory...