Resistive switching phenomena for resistive random access memory applications

• المؤلف الرئيسي: Sim, Raymond Keng Lim.
• مؤلفون آخرون: Lee Pooi See
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials::Organic/Polymer electronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/51138
• المؤسسة: Nanyang Technological University

The organic based resistive switching device, one of the candidates vying to be the next generation’s source of non-volatile memory (NVM) storage has generated substantial interest in recent years due to its potential to providing low cost, flexible and lightweight data storage applications, easi...