Resistive switching phenomena for resistive random access memory applications
The organic based resistive switching device, one of the candidates vying to be the next generation’s source of non-volatile memory (NVM) storage has generated substantial interest in recent years due to its potential to providing low cost, flexible and lightweight data storage applications, easi...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2013
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| 在線閱讀: | http://hdl.handle.net/10356/51138 |
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| 機構: | Nanyang Technological University |
| 語言: | English |