Atomistic simulation of epitaxial Si film growth on Si (001) surface
The purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface.
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2008
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| 在線閱讀: | http://hdl.handle.net/10356/5130 |
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| 總結: | The purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface. |
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