Atomistic simulation of epitaxial Si film growth on Si (001) surface

Atomistic simulation of epitaxial Si film growth on Si (001) surface

The purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface.

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Bibliographic Details
Main Author: Xie, Xuepeng.
Other Authors: School of Materials Science & Engineering
Format: Theses and Dissertations
Language:English
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:http://hdl.handle.net/10356/5130
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-51302023-03-04T16:32:05Z Atomistic simulation of epitaxial Si film growth on Si (001) surface Xie, Xuepeng. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films The purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface. Master of Engineering (MSE) 2008-09-17T10:20:46Z 2008-09-17T10:20:46Z 2001 2001 Thesis http://hdl.handle.net/10356/5130 en Nanyang Technological University 102 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Xie, Xuepeng.
Atomistic simulation of epitaxial Si film growth on Si (001) surface
description The purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Xie, Xuepeng.
format Theses and Dissertations
author Xie, Xuepeng.
author_sort Xie, Xuepeng.
title Atomistic simulation of epitaxial Si film growth on Si (001) surface
title_short Atomistic simulation of epitaxial Si film growth on Si (001) surface
title_full Atomistic simulation of epitaxial Si film growth on Si (001) surface
title_fullStr Atomistic simulation of epitaxial Si film growth on Si (001) surface
title_full_unstemmed Atomistic simulation of epitaxial Si film growth on Si (001) surface
title_sort atomistic simulation of epitaxial si film growth on si (001) surface
publishDate 2008
url http://hdl.handle.net/10356/5130
_version_ 1759854946168078336

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